GB25RF120K Datasheet, PDF (9/13 Pages) International Rectifier – IGBT PIM MODULE

Brake
16
14
400V
12
600V
10
8
6
4
2
0
0
25
50
75 100 125
Q _G, Total Gate Charge (nC)
Fig. 26 - Typical Gate Charge vs. V_GE
I_CE = 12.5A; L = 1mH
3000
GB25RF120K
50
45
25°C
40
125°C
35
30
25
20
15
10
5
0
0.0
1.0
2.0
3.0
4.0
5.0
VF (V)
Fig. 27 - Typ. Diode Forward Characteristics
tp = 80µs
1000
2500
2000
1500
1000
500
EON
EOFF
tdOFF
tF
100
tdON
tR
0
0
10
20
30
40
IC (A)
Fig. 28 - Typ. Energy Loss vs. I_C
T_J = 125°C; L=400µH; V_CE= 600V,R_G= 22Ω; V_GE= 15V
2000
10
0
10
20
30
40
IC (A)
Fig. 29 - Typ. Switching Time vs. I_C
T_J = 125°C; L=400µH; V_CE= 600V,R_G= 22Ω;V_GE= 15V
10000
1500
1000
EON
EOFF
500
0
0
50
100
150
RG (Ω)
Fig. 30 - Typ. Energy Loss vs. R_G
T_J = 125°C; L=400µH; V_CE= 600V, I_CE= 12.5A; V_GE= 15V
1000
tdOFF
tF
100
tdON
tR
10
0
25
50
75 100 125 150
RG (Ω)
Fig. 31 - Typ. Switching Time vs. R_G
T_J = 125°C; L=400µH; V_CE= 600V, I_CE= 12.5A; V_GE= 15V
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