GB25RF120K Datasheet, PDF (6/13 Pages) International Rectifier – IGBT PIM MODULE

GB25RF120K
40
Inverter
40
35
RG ₌ 4.7 Ω
35
30
RG ₌ 10 Ω
30
25
RG ₌ 22 Ω
25
20
RG ₌ 47 Ω
20
15
15
10
10
5
5
0
0
10
20
30
40
50
60
IF (A)
Fig. 13 - Typical Diode I_RR vs. I_F
T_J = 125°C
40
0
0
10
20
30
40
50
RG (Ω)
Fig. 14 - Typical Diode I_RR vs. R_G
T_J = 125°C; I_F = 25A
Thermistor
14
35
12
30
10
25
8
20
6
15
4
10
5
2
0
0
500
1000
1500
diF /dt (A/µs)
Fig. 15 - Typical Diode I_RR vs. di_F / dt
V_CC = 600V; V_GE = 15V; I_F = 25A; T_J = 125°C
0
0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 16 - Thermistor Resistance vs. Temperature
Input Rectifier
100
90
25°C
125°C
80
70
60
50
40
30
20
10
0
0.0
1.0
2.0
3.0
VF (V)
Fig. 17 - Typ. Diode Forward Characteristics
tp = 80µs
6
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