GB25RF120K Datasheet, PDF (4/13 Pages) International Rectifier – IGBT PIM MODULE

GB25RF120K
Inverter
50
45
VGE = 18V
40
VGE = 15V
VGE = 12V
35
VGE = 10V
30
VGE = 8.0V
25
20
15
10
5
0
0
1
2
3
4
5
6
VCE (V)
Fig. 1 - Typ. IGBT Output Characteristics
T_J = 25°C; tp = 80µs
350
300
250
TJ = 25°C
TJ = 125°C
200
150
100
TJ = 125°C
50
TJ = 25°C
0
0
5
10
15
20
VGE (V)
Fig. 3 - Typ. Transfer Characteristics
V_CE = 50V; tp = 10µs
50
45
40
VGE = 18V
VGE = 15V
35 VGE = 12V
VGE = 10V
30
VGE = 8.0V
25
20
15
10
5
0
0
1
2
3
4
5
6
VCE (V)
Fig. 2 - Typ. IGBT Output Characteristics
T_J = 125°C; tp = 80µs
20
18
16
14
12
ICE = 12.5A
10
ICE = 25A
8
ICE = 50A
6
4
2
0
5
10
15
20
VGE (V)
Fig. 4 - Typical V_CE vs. V_GE
T_J = 25°C
20
18
16
14
12
ICE = 12.5A
10
ICE = 25A
8
ICE = 50A
6
4
2
0
5
10
15
20
VGE (V)
Fig.5 - Typical V_CE vs. V_GE
T_J = 125°C
10000
1000
100
Cies
Coes
Cres
10
0
20
40
60
80
100
VCE (V)
Fig. 6- Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
4
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