GB25RF120K Datasheet, PDF (2/13 Pages) International Rectifier – IGBT PIM MODULE

GB25RF120K
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Inverter BVCES
Collector-to-Emitter Breakdown Voltage
1200 — —
V VGE = 0V, IC = 500µA
IGBT ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.0 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
V_CE(on)
Collector-to-Emitter Voltage
— 2.40 2.70 V IC = 25A, VGE = 15V
— 2.95 3.30
I_C = 40A, V_GE = 15V
— 2.85 —
I_C = 25A, V_GE = 15V, T_J = 125°C
— 3.55 —
I_C = 40A, V_GE = 15V, T_J = 125°C
V_GE(th)
Gate Threshold Voltage
4.0 5.0 6.0
V_CE = V_GE, I_C = 250µA
∆V_GE(th)
Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1mA (25°C-125°C)
I_CES
Zero Gate Voltage Collector Current
— 11 100 µA VGE = 0V, VCE = 1200V
— 750 —
V_GE = 0V, V_CE = 1200V, T_J = 125°C
I_GES
Gate-to-Emitter Leakage Current
— — ±200 nA VGE = ±20V
Q_g
Total Gate Charge (turn-on)
— 175 265
I_C = 25A
Q_ge
Gate-to-Emitter Charge (turn-on)
— 17.5 30
nC VCC = 400V
Q_gc
Gate-to-Collector Charge (turn-on)
— 81 125
V_GE = 15V
E_on
Turn-On Switching Loss
— 2450 4450
I_C = 25A, V_CC = 600V
E_off
Turn-Off Switching Loss
E_tot
Total Switching Loss
— 2050 3200
— 4500 7650
µJ VGE = 15V, RG = 10Ω, L = 400µH
e T_J = 25°C
E_on
Turn-On Switching Loss
— 3350 5650
I_C = 25A, V_CC = 600V
E_off
Turn-Off Switching Loss
E_tot
Total Switching Loss
— 2850 3850
— 6200 9500
µJ VGE = 15V, RG = 10Ω, L = 400µH
e T_J = 125°C
t_d(on)
Turn-On delay time
— 80 104
I_C = 25A, V_CC = 600V
t_r
Rise time
— 50 70
ns VGE = 15V, RG = 10Ω, L = 400µH
t_d(off)
Turn-Off delay time
— 510 1000
T_J = 125°C
t_f
Fall time
— 230 299
C_ies
Input Capacitance
— 2370 —
V_GE = 0V
C_oes
Output Capacitance
— 455 —
pF VCC = 30V
C_res
Reverse Transfer Capacitance
— 60 —
f = 1.0Mhz
RBSOA Reverse Bias Safe Operating Area
FULL SQUARE
T_J = 150°C, I_C = 80A
R_G = 10Ω, V_GE = +15V to 0V
T_J = 150°C
SCSOA Short Circuit Safe Operating Area
10 — —
µs VCC = 900V, VP = 1200V
R_G = 10Ω, V_GE = +15V to 0V
Inverter
T_J = 125°C
FRED Irr
Diode Peak Reverse Recovery Current
— 35 —
A VCC = 600V, IF = 25A, L = 400µH
V_GE = 15V, R_G = 10Ω
— 1.90 2.35 V IF = 25A
V_FM
Diode Forward Voltage Drop
— 2.25 2.80
I_F = 40A
— 2.00 —
I_F = 25A, T_J = 125°C
— 2.45 —
I_F = 40A, T_J = 125°C
1,2
4,5
3,4,5
7
CT1
CT4
9,11
CT4
WF1,2
10,12
CT4
WF1
WF2
6
CT2
CT3
WF4
13,14,15
CT4
8
2
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