GB25RF120K Datasheet, PDF (3/13 Pages) International Rectifier – IGBT PIM MODULE

GB25RF120K
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Input
V_FM
Maximum Forward Voltage Drop
— — 1.5
V I_F = 25A
Rectifier IRM
Maximum Reverse Leakage Current
— — 0.1 mA TJ = 25°C, VR = 1600V
r_T
Forward Slope Resistance
— — 1.0
T_J = 150°C, V_R = 1600V
— — 10.4 ^mΩ TJ = 150°C
V_F(TO)
Conduction Threshold Voltage
— — 0.85 V
Brake BVCES
Collector-to-Emitter Breakdown Voltage 1200 — —
V VGE = 0V, IC = 500µA
IGBT ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.6 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
V_CE(on)
Collector-to-Emitter Voltage
— 2.30 2.50 V IC = 12.5A, VGE = 15V
— 3.00 3.25
I_C = 25A, V_GE = 15V
— 2.70 —
I_C = 12.5A, V_GE = 15V, T_J = 125°C
— 3.70 —
I_C = 25A, V_GE = 15V, T_J = 125°C
V_GE(th)
Gate Threshold Voltage
4.0 5.0 6.0
V_CE = V_GE, I_C = 250µA
∆V_GE(th)
Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1mA (25°C-125°C)
I_CES
Zero Gate Voltage Collector Current
— 8.0 50
µA VGE = 0V, VCE = 1200V
— 370 —
V_GE = 0V, V_CE = 1200V, T_J = 125°C
I_GES
Gate-to-Emitter Leakage Current
— — ±200 nA VGE = ±20V
Q_g
Total Gate Charge (turn-on)
— 96 145
I_C = 12.5A
Q_ge
Gate-to-Emitter Charge (turn-on)
— 46 70
nC VCC = 400V
Q_gc
Gate-to-Collector Charge (turn-on)
— 10 15
V_GE = 15V
E_on
Turn-On Switching Loss
— 1050 1200
I_C = 12.5A, V_CC = 600V
E_off
Turn-Off Switching Loss
E_tot
Total Switching Loss
— 750 1000
— 1800 2200
µJ VGE = 15V, RG = 22Ω, L = 400µH
e T_J = 25°C
E_on
Turn-On Switching Loss
— 1350 1500
I_C = 12.5A, V_CC = 600V
E_off
Turn-Off Switching Loss
E_tot
Total Switching Loss
— 1100 1250
— 2450 2750
µJ VGE = 15V, RG = 22Ω, L = 400µH
e T_J = 125°C
t_d(on)
Turn-On delay time
— 50 65
I_C = 12.5A, V_CC = 600V
t_r
Rise time
— 36 50
ns VGE = 15V, RG = 22Ω, L = 400µH
t_d(off)
Turn-Off delay time
— 350 400
T_J = 125°C
t_f
Fall time
— 210 275
C_ies
Input Capacitance
— 2370 —
V_GE = 0V
C_oes
Output Capacitance
— 460 —
pF VCC = 30V
C_res
Reverse Transfer Capacitance
— 60 —
f = 1.0Mhz
RBSOA Reverse Bias Safe Operating Area
FULL SQUARE
T_J = 150°C, I_C = 50A
R_G = 22Ω, V_GE = +15V to 0V
T_J = 150°C
SCSOA Short Circuit Safe Operating Area
10 — —
µs VCC = 900V, VP = 1200V
R_G = 22Ω, V_GE = +15V to 0V
Brake Irr
Diode Peak Reverse Recovery Current
— 24 —
A VCC = 600V, IF = 12.5A, L = 400µH
Diode
V_GE = 15V, R_G = 22Ω, T_J = 125°C
— 1.90 2.10 V IF = 8.0A
V_FM
Diode Forward Voltage Drop
— 2.40 2.65
I_F = 16A
— 2.00 —
I_F = 8.0A, T_J = 125°C
— 2.65 —
I_F = 16A, T_J = 125°C
NTC R
Resistance
4538 5000 5495 Ω TJ = 25°C
468.6 493.3 518.0
T_J = 100°C
B
B Value
3307 3375 3443 K TJ = 25 / 50 °C
17
20,21
23,24
22,23,24
26
CT1
CT4
28,30
CT4
WF3,4
29,31
CT4
WF3
WF4
25
CT2
CT3
32,33,34
CT4
27
16
Note:
 For UL Applications, T_J is limited to +125°C. (See File E78996).
‚ Power dependent on temperature. T_J not to exceed T_J max.
ƒ Energy losses include "tail" and diode reverse recovery.
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