GB25RF120K Datasheet, PDF (5/13 Pages) International Rectifier – IGBT PIM MODULE

16
14
12
10
8
6
4
2
0
0
400V
600V
50
100
150
200
Q _G, Total Gate Charge (nC)
Inverter
100
90
80
70
60
50
40
30
20
10
0
0.0
GB25RF120K
25°C
125°C
1.0
2.0
3.0
4.0
VF (V)
Fig. 7 - Typical Gate Charge vs. V_GE
I_CE = 25A; L = 1mH
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
10000
9000
8000
7000
6000
5000
EON
4000
3000
2000
EOFF
1000
0
0 10 20 30 40 50 60
IC (A)
Fig. 9 - Typ. Energy Loss vs. I_C
T_J = 125°C; L=400µH; V_CE= 600V,R_G= 10Ω; V_GE= 15V
1000
tdOFF
tF
100
tdON
tR
10
0
10
20
30
40
50
60
IC (A)
Fig. 10 - Typ. Switching Time vs. I_C
T_J = 125°C; L = 400µH; V_CE = 600V,R_G = 10Ω;V_GE = 15V
6000
10000
5000
4000
3000
2000
EON
EOFF
1000 ^tdOFF
tF
tdON
100
1000
0
0
10
20
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50
RG (Ω)
Fig. 11 - Typ. Energy Loss vs. R_G
T_J = 125°C; L=400µH; V_CE= 600V, I_CE= 25A; V_GE= 15V
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tR
10
0
10
20
30
40
50
RG (Ω)
Fig. 12 - Typ. Switching Time vs. R_G
T_J = 125°C; L=400µH; V_CE= 600V, I_CE= 25A; V_GE= 15V
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