JANSF2N7422U Datasheet, PDF (8/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT

IRHN9150, JANSR2N7422U
Pre-Irradiation
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -25V, starting TJ = 25°C, L= 2.1mH
Peak IL = -22A, VGS = -12V
➂ ISD ≤ -22A, di/dt ≤ -450A/µs,
VDD ≤ -100V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-1
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
PAD ASSIGNMENTS
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IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: [phone]
TAC Fax: [phone]
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2004
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