JANSF2N7422U Datasheet, PDF (6/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT

IRHN9150, JANSR2N7422U
Pre-Irradiation
24
20
16
12
8
4
0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ V_DD
Fig 10a. Switching Time Test Circuit
V_GS
10%
t_d(on) t_r
t_d(off) t_f
90%
V_DS
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
 ^{SINGLE PULSE}
(THERMAL RESPONSE)
 PDM
t₁
t₂
 Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T _J = P _DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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