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JANSF2N7422U Datasheet, PDF (7/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Pre-Irradiation
IRHN9150, JANSR2N7422U
VDS
L
RG
-V2 0GVS
tp
D.U .T
IA S
0.01Ω
D R IV E R
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
1200
1000
 TOP
ID
-9.8A
-14A
BOTTOM -22A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ, Junction Temperature ( °C)
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-12V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
-1122VV
.2µF
50KΩ
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7