JANSF2N7422U Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Pre-Irradiation
IRHN9150, JANSR2N7422U
7000
6000
5000
4000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
 C_iss
3000
2000
C _oss
1000
0
1
C _rss
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = -22A}
16
12
 ^{VDS =-80V}
V_DS = -50V
V_DS = -20V
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
 T_J = 150^° C
10
 T_J = 25^°C
 ^VGS ^{= 0 V}
1
0.0
1.0
2.0
3.0
4.0
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1000
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
 100us
 1ms
10
 10ms
 ^{TC = 25 °C}
T_J = 150 °C
Single Pulse
1
1
10
100
1000
-V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5