JANSF2N7422U Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT

PD - 90885F
RADIATION HARDENED
IRHN9150
JANSR2N7422U
POWER MOSFET
100V, P-CHANNEL
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/662
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHN9150 100K Rads (Si)
IRHN93150 300K Rads (Si)
RDS(on)
0.080Ω
0.080Ω
ID
-22A
-22A
QPL Part Number
JANSR2N7422U
JANSF2N7422U
International Rectifier’s RADHard HEXFET^TM
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the
well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
PCKG Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
SMD-1
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
-22
-14
-88
150
1.2
±20
500
-22
15
-23
-55 to 150
300 ( for 5s)
2.6 (typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
1
04/07/04