IRF8513PBF Datasheet, PDF (7/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF8513PbF
1000
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Ri (°C/W) τi (sec)
0.16165 0.000010
0.32401 0.000015
0.610673 0.000020
1.3993
0.001289
τJ
τJ
τ1
τ1
R1
R1
R2
R2
R3
R3
τ2_τ2
τ3
τ3
R4
R4
R5
R5
R6
R6
R7
R7
τ4
τ4
τ5
τ5
τ6
τ6
τ7 _τ7
R8
R8
τA_τA
1.8271
15.5964
Ci= τi/Ri
24.1639
Ci= τi/Ri
Notes:
55.9172
0.000340
0.027339
23.89834
0.716225
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
1000
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Ri (°C/W) τi (sec)
0.12491 0.000010
0.18285 0.000012
0.47188 0.000020
1.08129 0.001289
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
R6
R6
R7
R7
R8
R8
1.41186
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
τ4
τ4
τ5
τ5
τ6
τ6
τ7
τ7
τA
τA
5.99757
Ci= τi/Ri
18.93874
Ci= τi/Ri
Notes:
34.29159
0.000340
0.013743
31.39834
0.682685
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
Fig 27. Layout Diagram
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