IRF8513PBF Datasheet, PDF (4/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF8513PbF
Typical Characteristics
10000
1000
Q1 - Control FET
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
10000
1000
Coss
100
Crss
100
Q2 - Synchronous FET
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
ID= 6.4A
12.0
10.0
VDS= 24V
VDS= 15V
14.0
12.0
ID= 8.6A
10.0
VDS= 24V
VDS= 15V
8.0
8.0
6.0
6.0
4.0
4.0
2.0
2.0
0.0
0 2 4 6 8 10 12 14 16
QG, Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
0.0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs. Gate-to-Source
Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1
TA = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10msec ^1msec
10
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
4
100µsec
10
1msec
1
TA = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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