IRF8513PBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96196
IRF8513PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
: _30V Q1 15.5m @V_GS = 10V
: Q2 12.7m @V_GS = 10V
I_D
8.0A
11A
Benefits
l Low Gate Charge and Low R_DS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l 100% Tested for R_G
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
B
T! 
T! 
B! 
9
 T ÃÃ9!
 T ÃÃ9!
 T ÃÃ9!
SO-8
Description
The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard
SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation
including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make
this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook
and Netcom applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
I_DM
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
P_D @T_A = 25°C
Power Dissipation
P_D @T_A = 70°C
Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Q1 Max.
8.0
6.2
64
1.5
1.05
0.01
30
± 20
Q2 Max.
11
9.0
88
2.4
1.68
0.02
-55 to + 175
Units
V
A
W
W/°C
°C
Thermal Resistance
R_θJL
g ^Parameter
Junction-to-Drain Lead
R_θJA
fg Junction-to-Ambient
Q1 Max.
42
100
Q2 Max.
42
62.5
Units
°C/W
Notes  through … are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/05/08