IRF8513PBF Datasheet, PDF (5/11 Pages) International Rectifier – HEXFET Power MOSFET

Q1 - Control FET
2.0
ID = 8.0A
VGS = 10V
1.5
Typical Characteristics
2.0
IRF8513PbF
Q2 - Synchronous FET
ID = 11A
VGS = 10V
1.5
1.0
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100
10 ^{TJ = 175°C}
TJ = 175°C
10
TJ = 25°C
VGS = 0V
1.0
0.2 0.8 1.4 2.0 2.6 3.2 3.8
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
50
45
ID = 8.0A
40
35
30
25
TJ = 125°C
20
15
TJ = 25°C
10
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
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TJ = 25°C
VGS = 0V
1.0
0.1 0.7 1.3 1.9 2.5 3.1 3.7 4.3
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
30
ID = 11A
25
20
TJ = 125°C
15
TJ = 25°C
10
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
5