IRF8513PBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF8513PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
BV_DSS
∆ΒV_DSS/∆T_J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
I_GSS
gfs
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
E_AS
I_AR
d Single Pulse Avalanche Energy
c Avalanche Current
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
c ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
2
Forward Trun-On Time
Q1&Q2
Q1
Q2
Q1
Q2
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
19
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.021
0.021
12.5
18.1
10.2
14.2
1.8
-6.5
-6.9
–––
–––
–––
–––
–––
–––
5.7
7.6
1.2
1.7
0.68
1.0
2.2
3.1
1.6
1.9
2.9
4.0
3.9
5.2
2.1
1.4
8.0
8.9
8.5
10.7
8.8
9.3
5.7
5.0
766
1024
172
238
83
116
Max.
–––
–––
–––
15.5
22.2
12.7
16.9
2.35
–––
–––
1.0
150
100
-100
–––
–––
8.6
11.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.2
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ
e V_GS = 10V, I_D = 8.0A
e V_GS = 4.5V, I_D = 6.4A
e V_GS = 10V, I_D = 11A
e V_GS = 4.5V, I_D = 8.6A
V Q1: VDS = VGS, ID = 25µA
mV/°C ^{Q2: VDS = VGS, ID = 25µA}
µA
V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA
V_GS = 20V
V_GS = -20V
S
V_DS = 15V, I_D = 6.4A
V_DS = 15V, I_D = 8.6A
Q1
V_DS = 15V
V_GS = 4.5V, I_D = 6.4A
nC
Q2
V_DS = 15V
V_GS = 4.5V, I_D = 8.6A
See Fig. 31a &31b
nC ^{VDS = 16V, VGS = 0V}
Ω
Q1
V_DD = 15V, V_GS = 4.5V
I_D = 6.4A
ns ^{RG = 1.8Ω See Fig.30a & 30b}
Q2
V_DD = 15V, V_GS = 4.5V
I_D = 8.6A
RG = 1.8W
V_GS = 0V
pF ^{VDS = 15V}
ƒ = 1.0MHz
Typ.
–––
–––
Q1 Max.
49
6.4
Q2 Max.
70
8.6
Units
mJ
A
Min. Typ. Max. Units
Conditions
Q1
––– ––– 1.9
A ^{MOSFET symbol}
Q2 ––– ––– 3.0
showing the
Q1 ––– ––– 64
A ^{integral reverse}
Q2
Q1
Q2
––– ––– 88
––– ––– 1.0
––– ––– 1.0
V
p-n junction diode.
e T_J = 25°C, I_S = 6.4A, V_GS = 0V
e T_J = 25°C, I_S = 8.6A, V_GS = 0V
Q1
Q2
––– 15
––– 17
23
26
e ^ns
Q1 T_J = 25°C, I_F = 6.4A,
V_DD = 15V, di/dt = 100A/µs
Q1
Q2
––– 7.2
––– 9.3
11
14
e nC Q2 TJ = 25°C, IF = 8.6A,
VDD = 15V, di/dt = 100A/µs
Intrinsic turn -on time is negligible (turn -on is dominated by LS+LD)
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