IRF8513PBF Datasheet, PDF (6/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF8513PbF
Typical Characteristics
Q1 - Control FET
9
Q2 - Synchronous FET
12
8
10
7
6
8
5
6
4
3
4
2
2
1
0
25 50 75 100 125 150 175
TA , Ambient Temperature (°C)
Fig 19. Maximum Drain Current vs. Ambient Temp.
0
25 50 75 100 125 150 175
TA , Ambient Temperature (°C)
Fig 20. Maximum Drain Current vs. Ambient Temp.
2.5
2.5
2.0
ID = 250µA
1.5
ID = 25µA
1.0
2.0
ID = 250µA
1.5
ID = 25µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 21. Threshold Voltage vs. Temperature
250
ID
TOP
2.13A
200
4.20A
BOTTOM 6.40A
150
100
50
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 22. Threshold Voltage vs. Temperature
300
ID
250
TOP
2.62A
5.45A
BOTTOM 8.60A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 24. Maximum Avalanche Energy vs. Drain Current
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