IRF8306MPBF_15 Datasheet, PDF (7/10 Pages) International Rectifier – Integrated Monolithic Schottky Diode

IRF8306MPbF
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
‚
-

R_G
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
D.U.T. I_SD Waveform
Reverse
-^„ +
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
*
• dv/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
Re-Applied
** ^{+ Voltage}
Body Diode Forward Drop
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Inductor Curent
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** V_GS = 5V for Logic Level Devices
V^*_G^*_S^*=10V
V_DD
I_SD
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET^® Power MOSFETs
DirectFET™ Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
D
S
G
S
D
G=GATE
D=DRAIN
S=SOURCE
D
D
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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May 7, 2014