IRF8306MPBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Integrated Monolithic Schottky Diode

IRF8306MPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
ΔV_GS(th)/ΔT_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
61
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
2.7
1.8
2.8
1.8
-4.8
–––
–––
–––
–––
–––
25
7.3
3.0
6.7
8.0
9.7
22
1.3
16
34
19
19
4110
970
340
Typ.
–––
–––
0.7
21
29
Max. Units
Conditions
–––
–––
2.5
3.6
2.35
–––
500
5.0
100
-100
–––
V VGS = 0V, ID = 1.0mA
mV/°C ^{Reference to 25°C, I}D ^{= 6mA}
i _mΩ V_GS = 10V, I_D = 23A
i V_GS = 4.5V, I_D = 18A
V VDS = VGS, ID = 100μA
mV/°C ^VDS ^{= V}GS^{, I}D ^{= 10mA}
μA ^VDS ^{= 24V, V}GS ^{= 0V}
mA VDS = 24V, VGS = 0V, TJ = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 15V, I}D ^{= 18A}
38
–––
V_DS = 15V
––– nC VGS = 4.5V
–––
I_D = 18A
–––
See Fig. 15
–––
––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
–––
–––
Ãi Ω
V_DD = 15V, V_GS = 4.5V
––– ns ID = 18A
–––
R_G = 1.8Ω
–––
See Fig. 17
–––
V_GS = 0V
––– pF ^VDS ^{= 15V}
–––
ƒ = 1.0MHz
Max. Units
Conditions
23
MOSFET symbol
D
A showing the
180
integral reverse
G
0.75
i ^{p-n junction diode.}
S
V TJ = 25°C, IS = 18A, VGS = 0V
32
44
i ^{ns TJ = 25°C, IF = 18A}
nC di/dt = 300A/μs
Notes:
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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May 7, 2014