IRF8306MPBF_15 Datasheet, PDF (5/10 Pages) International Rectifier – Integrated Monolithic Schottky Diode

IRF8306MPbF
1000
100
10
TJ = 150°C
1
TJ = 25°C
TJ = -40°C
VGS = 0V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
1msec
1
DC
0.1 TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.0
0.1
10msec
1.0
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
140
2.5
120
100
2.0
ID = 10mA
80
60
1.5
40
20
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
900
800
700
600
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.1A
1.8A
BOTTOM 18A
500
400
300
200
100
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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May 7, 2014