IRF8306MPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Integrated Monolithic Schottky Diode

IRF8306MPbF
HEXFET^® Power MOSFET plus Schottky Diode ‚
l RoHS Compliant Containing No Lead and Halogen Free  _{Typical values (unless otherwise specified)}
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
25nC 6.7nC 3.0nC 29nC 22nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
G
D
S
S
D
l 100% Rg tested
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Orderable part number
IRF8306MTRPbF
IRF8306MTR1PbF
Package Type
DirectFET MX
DirectFET MX
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
10
8
6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
ID = 23A
14.0
12.0 ^{ID= 18A}
10.0
8.0
Max.
30
±20
23
18
140
180
230
18
VDS= 24V
VDS= 15V
VDS= 6V
Units
V
A
mJ
A
4
TJ = 125°C
2
TJ = 25°C
0
2468
10 12 14 16 18 20
6.0
4.0
2.0
0.0
0
20
40
60
80
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 1.37mH, R_G = 50Ω, I_AS = 18A.
1
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May 7, 2014