IRF8306MPBF_15 Datasheet, PDF (4/10 Pages) International Rectifier – Integrated Monolithic Schottky Diode

IRF8306MPbF
1000
100
10
TOP
BOTTOM
VGS
10V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
2.3V
1
0.1
0.1
2.3V
1
≤60μs PULSE WIDTH
Tj = 25°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
100
10
VDS = 15V
≤60μs PULSE WIDTH
TJ = 150°C
TJ = 25°C
TJ = -40°C
1
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
2.3V
10
2.3V
1
0.1
≤60μs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0
ID = 23A
VGS = 10V
1.5
VGS = 4.5V
1.0
0.1
1
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
5
TJ = 25°C
4
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
3
2
100
1
10
100
1
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
4
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May 7, 2014