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IRF6641TR1PBF Datasheet, PDF (7/9 Pages) International Rectifier – DirectFET TM MOSFET | |||
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IRF6641TRPbF
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
Â
-
Â
RG
Â
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
-
⢠Low Leakage Inductance
Current Transformer
D.U.T. ISD Waveform
Reverse
-Â +
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
*
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
VDD
Re-Applied
** + Voltage
Body Diode Forward Drop
⢠ISD controlled by Duty Factor "D"
-
⢠D.U.T. - Device Under Test
Inductor Curent
Ripple ⤠5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
V*G*S*=10V
VDD
ISD
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
DirectFETÂ Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
www.irf.com
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