IRF6641TR1PBF Datasheet, PDF (3/9 Pages) International Rectifier – DirectFET TM MOSFET

IRF6641TRPbF
Absolute Maximum Ratings
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
T_P
T_J
T_STG
e Power Dissipation
e Power Dissipation
f Power Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
Parameter
el Junction-to-Ambient
jl Junction-to-Ambient
kl Junction-to-Ambient
fl Junction-to-Case
Junction-to-PCB Mounted
Max.
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
W
°C
Units
°C/W
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R _1R1
Ci= τi/Ri
Ci= τi/Ri
R_{2R 2}
τ_{2 τ2}
R _{3R 3}
τ_{3 τ3}
0.001
1E-006 1E-005 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
R_{4R4 Ri (°C/W) τi (sec)}
τ_AτA 0.6784
0.001268
τ_{4 τ4}
17.299 0.033387
17.566 0.508924
9.4701 11.19309
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
10
100
1000
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state.
‰ Mounted on minimum footprint full size board with metalized
„ T_C measured with thermocouple incontact with top (Drain) of part. ^{back and with small clip heatsink.}
ˆ Used double sided cooling, mounting pad with large heatsink.
Š R_θ is measured at T_J of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
3