IRF6641TR1PBF Datasheet, PDF (2/9 Pages) International Rectifier – DirectFET TM MOSFET

IRF6641TRPbF
Electrical Characteristic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
I_GSS
gfs
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
200 ––– –––
V ^VGS ^{= 0V, I}D ^{= 250µA}
––– 0.23 ––– V/°C ^{Reference to 25°C, I}D ^{= 1mA}
––– 51 59.9 mΩ ^VGS ^{= 10V, I}D ^{= 5.5A i}
3.0 4.0 4.9
V ^VDS ^{= V}GS^{, I}D ^{= 150µA}
––– -11 ––– mV/°C
––– ––– 20
µA ^VDS ^{= 200V, V}GS ^{= 0V}
––– ––– 250
V_DS = 160V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA ^VGS ^{= 20V}
––– ––– -100
V_GS = -20V
13 ––– –––
S ^VDS ^{= 10V, I}D ^{= 5.5A}
––– 34 48
––– 8.7 –––
V_DS = 100V
––– 1.9 ––– nC ^VGS ^{= 10V}
––– 9.5 14
I_D = 5.5A
––– 14 –––
See Fig. 15
––– 11 –––
––– 12 ––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
––– 1.0 –––
––– 16 –––
––– 11 –––
––– 31 –––
Ω
V_DD = 100V, V_GS = 10V i
I_D = 5.5A
ns R_G = 6.2Ω
––– 6.5 –––
––– 2290 –––
––– 240 –––
V_GS = 0V
pF ^VDS ^{= 25V}
––– 46 –––
ƒ = 1.0MHz
––– 1780 –––
––– 100 –––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
V_GS = 0V, V_DS = 160V, f=1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) g
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– 26
––– ––– 37
––– ––– 1.3
––– 85 130
––– 320 480
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V ^TJ ^{= 25°C, I}S ^{= 5.5A, V}GS ^{= 0V i}
ns ^TJ ^{= 25°C, I}F ^{= 5.5A, V}DD ^{= 100V}
nC di/dt = 100A/µs c
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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