IRF6641TR1PBF Datasheet, PDF (5/9 Pages) International Rectifier – DirectFET TM MOSFET

100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
IRF6641TRPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
5
1
0.1 _{Tc = 25°C}
Tj = 150°C
Single Pulse
0.01
0
1
10msec
100µsec
1msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
4
5.0
3
4.0
2
ID = 150µA
3.0
ID = 250µA
ID = 1.0mA
1
ID = 1.0A
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
200
180
160
140
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP
3.7A
5.7A
BOTTOM 11A
120
100
80
60
40
20
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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