IRF6641TR1PBF Datasheet, PDF (4/9 Pages) International Rectifier – DirectFET TM MOSFET

IRF6641TRPbF
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
7.0V
10
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
10
7.0V
1
1
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VDS = 10V
≤60µs PULSE WIDTH
0.1
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
0.1
0.1
≤60µs PULSE WIDTH
Tj = 150°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.5
ID = 5.5A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
100
TJ = 25°C
90
80
Vgs = 7.0V
Vgs = 8.0V
70
Vgs = 10V
Vgs = 15V
60
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
50
0
10 20 30 40 50 60
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs. Drain Current
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