IRF6641TR1PBF Datasheet, PDF (1/9 Pages) International Rectifier – DirectFET TM MOSFET

PD - 97262
IRF6641TRPbF
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
200V max ±20V max 51mΩ@ 10V
Q_{g tot}
Q_gd
V_gs(th)
34nC
9.5nC
4.0V
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-
75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance
enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal
for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
Max.
200
±20
4.6
3.7
26
37
46
11
Units
V
A
mJ
A
200
180
160
140
120
100
80
60
40
20
0
4
I _D = 5.5A
T _J = 125°C
T _J = 25°C
6
8
10
12
14
16
V _GS, Gate -to -Source Voltage (V)
12.0
10.0
8.0
6.0
I _D = 5.5A
V _DS = 160V
V _DS = 100V
V _DS = 40V
4.0
2.0
0.0
0
5
10
15
20
25
30
35
40
Q _G , Total Gate Charge (nC)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.77mH, R_G = 25Ω, I_AS = 11A.
1
10/02/06