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| ISL70617SEH Datasheet, PDF (8/28 Pages) Intersil Corporation – High voltage process control | |||
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ISL70617SEH
Electrical Specifications VCC = VCO = 18V, VEE = VEO = -18V, VCM = 0V, RL = 10kΩ, RFB = RIN = 30.1kΩ, TA = +25°C, unless otherwise
specified. Boldface limits apply across the operating temperature range, -55°C to +125°C and across a total ionizing dose of 75krad(Si) at +25°C with
exposure at a low dose rate of <10mrad(Si)/s, unless otherwise specified. (Continued)
PARAMETER
DESCRIPTION
TEST CONDITIONS
MIN
MAX
(Note 5) TYP (Note 5) UNIT
iN(IERR)
iNIERR RMS
Total Internal Noise Current Density
0.1Hz to 10Hz Total Internal RMS Noise
Current
f = 1kHz, (Note 14)
f = 0.1Hz to 10Hz
2.6
pA/âHz
4
pARMS
-3dB BW
-3dB Bandwidth vs Closed Loop Gain,
RFB = 30.1k
-3dB BW
-3dB Bandwidth vs Closed Loop Gain,
RFB = 121k
SR
Slew Rate
RFB = 30.1kΩ; RIN = 301kΩ; G = 0.1
RFB = 30.1kΩ; RIN = 30.1kΩ; G = 1
RFB = 30.1kΩ; RIN = 3.01kΩ; G = 10
RFB = 30.1kΩ; RIN = 301Ω; G = 100
RFB = 30.1kΩ; RIN = 30.1Ω; G = 1000
RFB = 121kΩ; RIN = 1.21MΩ; G = 0.1
RFB = 121kΩ; RIN = 121kΩ; G = 1
RFB = 121kΩ; RIN = 12.1kΩ; G = 10
RFB = 121kΩ; RIN = 1.21kΩ; G = 100
RFB = 121kΩ; RIN = 121Ω; G = 1000
5.5
2.6
2.2
2.0
0.3
5.0
1.4
0.5
0.45
0.4
4
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/µs
tS
Settling Time to 0.01%
VOUT = ±2.4V, RF = 30.1kΩ
3
µs
VOUT = ±9.6V, RF = 121kΩ
11
µs
NOTES:
5. Compliance to datasheet limits is assured by one or more methods: production test, characterization, and/or design.
6. Differential gain (AV) = RFB/RIN.
7. ±VOUT, clipping ~ IRF*RFB.
8. IBVFB = (VOSOUT - (RFB/RIN)*VOSIN - VOSFB)/RFB.
9. Compliance to datasheet limits is assured by design simulation.
10. VCC, VCO = 4V, 5V, 15V, 18V, VEE, VEO = -4V, -5V, -15V, -18V.
11. VCC = 18V, VEE = -18V, VCO = 1.5V, VEO = -1.5V.
12. VCC, VCO = 5V, 18V, VEE, VEO = -5V, -18V.
13. VCC, VCO = 18V, 21V, VEE, VEO = -18V, -21V.
14. Total noise calculated with Equation 17 on page 22.
15. Rejection ratio numbers are reported as absolute values.
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8
FN8697.4
December 16, 2016
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