ISL70617SEH Datasheet, PDF (25/28 Pages) Intersil Corporation – High voltage process control

ISL70617SEH
Package Characteristics
Weight of Packaged Device
1.33 grams (Typical)
Lid Characteristics
Finish: Gold
Potential: Connected to Pin #8 (GND)
Case Isolation to Any Lead: 20 x 10⁹ Ω (minimum)
Die Characteristics
Die Dimensions
2960µm x 3210µm (117 mils x 127 mils)
Thickness: 483µm ±25µm (19 mils ±1 mil)
Interface Materials
GLASSIVATION
Type: Silicon Nitride
Thickness: 15kÅ
Metalization Mask Layout
DNC DNC
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 30kÅ
BACKSIDE FINISH
Silicon
Assembly Related Information
SUBSTRATE POTENTIAL
Floating
Additional Information
WORST CASE CURRENT DENSITY
<2 x 10⁵ A/cm²
PROCESS
Dielectrically Isolated Advanced Bipolar Technology- PR40
IN+ IN-
+R_FB
+R_FB SENSE
-R_FB SENSE
-R_FB
GND
V_CC
DNC
+R_IN
+R_IN SENSE
-R_IN SENSE
-R_IN
V_CMO
V_EE
V_CO
+V_FB +V_OUT
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-V_OUT -V_FB
VEO
FN8697.4
December 16, 2016