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ISL62873 Datasheet, PDF (16/17 Pages) Intersil Corporation – PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator
ISL62873
EN, PGOOD, VID0, and VID1 Pins
These are logic signals that are referenced to the GND pin.
Treat as a typical logic signal.
OCSET and VO Pins
The current-sensing network consisting of ROCSET, RO, and
CSEN needs to be connected to the inductor pads for
accurate measurement of the DCR voltage drop. These
components however, should be located physically close to
the OCSET and VO pins with traces leading back to the
inductor. It is critical that the traces are shielded by the
ground plane layer all the way to the inductor pads. The
procedure is the same for resistive current sense.
FB, SREF, SET0, SET1, and SET2 Pins
The input impedance of these pins is high, making it critical
to place the loop compensation components, setpoint
reference programming resistors, feedback voltage divider
resistors, and CSOFT close to the IC, keeping the length of
the traces short.
LGATE, PGND, UGATE, BOOT, and PHASE Pins
The signals going through these traces are high dv/dt and
high di/dt, with high peak charging and discharging current.
The PGND pin can only flow current from the gate-source
charge of the low-side MOSFETs when LGATE goes low.
Ideally, route the trace from the LGATE pin in parallel with
the trace from the PGND pin, route the trace from the
UGATE pin in parallel with the trace from the PHASE pin,
and route the trace from the BOOT pin in parallel with the
trace from the PHASE pin. These pairs of traces should be
short, wide, and away from other traces with high input
impedance; weak signal traces should not be in proximity
with these traces on any layer.
Copper Size for the Phase Node
The parasitic capacitance and parasitic inductance of the
phase node should be kept very low to minimize ringing. It is
best to limit the size of the PHASE node copper in strict
accordance with the current and thermal management of the
application. An MLCC should be connected directly across
the drain of the upper MOSFET and the source of the lower
MOSFET to suppress the turn-off voltage spike.
16
FN6930.0
June 30, 2009