SPP11N65C3_09 Datasheet, PDF (9/15 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

17 Typ. switching losses
E = f (I_D), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, R_G=6.8Ω
0.04
*) Eon includes SPD06S60 diode
mWs
commutation losses
0.03
0.025
0.02
0.015
0.01
0.005
0
0
Eon*
Eoff
2
4
6
19 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
4
A
8
A
12
I_D
SPP11N65C3,SPA11N65C3
SPI11N65C3
18 Typ. switching losses
E = f(R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V,I_D=11A
0.24
*) Eon includes SPD06S60 diode
commutation losses
mWs
0.16
Eoff
0.12
0.08
0.04
Eon*
0
0 10 20 30 40 50 Ω 70
R_G
20 Avalanche energy
E_AS = f (T_j)
par.: I_D = 2.5 A, V_DD = 50 V
350
mJ
3
T_{j(Start)=25°C}
250
2.5
200
2
T_{j(Start)=125°C}
150
1.5
100
1
0.5
50
0 _-3
-2
-1
0
1
2
10 10 10 10 10 10
Rev. 2.91
µs
4
10
t_AR
Page 9
0
20 40 60 80 100 120 °C 160
T_j
2009-11-30