SPP11N65C3_09 Datasheet, PDF (8/15 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N65C3,SPA11N65C3
SPI11N65C3
13 Typ. switching time
t = f (I_D), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, R_G=6.8Ω
70
ns
60
55
td(off)
50
45
40
35
30
25
20
tf
15
10
td(on)
5
tr
0
0
2
4
6
8
A
12
I_D
14 Typ. switching time
t = f (R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=11 A
350
ns
250
200
td(off)
td(on)
150
tr
tf
100
50
0
0 10 20 30 40 50 Ω 70
R_G
15 Typ. drain current slope
di/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=11A
3000
16 Typ. drain source voltage slope
dv/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=11A
140
V/ns
A/µs
2000
1500
1000
500
di/dt(off)
di/dt(on)
0
0
20
40
60
80
Ω 120
R_G
120
110
100
90
80
70
60
50
40
30
20
10
0
dv/dt(off)
10 20
dv/dt(on)
30 40 50
Ω 70
R_G
Rev. 2.91
Page 8
2009-11-30