SPP11N65C3_09 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N65C3,SPA11N65C3
SPI11N65C3
21 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
785
V
745
22 Avalanche power losses
P_AR = f (f )
parameter: E_AR=0.6mJ
300
W
725
200
705
685
150
665
100
645
625
50
605
585
-60 -20
20
60 100 °C
180
T_j
0
10
4
10 ⁵
Hz
10 ⁶
f
23 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁴
pF
C_iss
10 ³
10 ²
10 ¹
C_rss
C_oss
10 ⁰
0
100 200 300 400
Rev. 2.91
24 Typ. C_oss stored energy
E_oss=f(V _DS)
7.5
µJ
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
V
600
0
V_DS
Page 10
100 200 300 400
V
600
V_DS
2009-11-30