SPP11N65C3_09 Datasheet, PDF (7/15 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

9 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 7 A, V_GS = 10 V
SPP11N65C3
2.1
Ω
1.8
1.6
1.4
1.2
1
0.8
0.6
98%
0.4
typ
0.2
0
-60 -20
20
60 100 ^°C
180
T_j
11 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 11 A pulsed
SPP11N65C3
16
V
SPP11N65C3,SPA11N65C3
SPI11N65C3
10 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
40
A
25°C
32
28
24
150°C
20
16
12
8
4
0
0
2
4
6
8 10 12 V 15
V_GS
12 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP11N65C3}
A
12
0,2 V
DS max
10
0,8 V_{DS max}
8
10 ¹
6
4
2
0
0 10 20 30 40 50 _nC 70
Q_Gate
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
Rev. 2.91
Page 7
2009-11-30