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SPP11N65C3_09 Datasheet, PDF (6/15 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
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SPP11N65C3,SPA11N65C3
SPI11N65C3
5 Transient thermal impedance FullPAK 6 Typ. output characteristic
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
40
A
20V
10V
8V
32
7V
10 -1
10 -2
10 -3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
s 10 1
tp
28
6,5V
24
20
6V
16
12
5,5V
8
5V
4
4,5V
0
0 3 6 9 12 15 18 21 V 27
VDS
7 Typ. output characteristic
8 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
22
2
A
20V
8V
Ω
7V
18
7.5V
4V 4.5V 5V
5.5V
6V
6V
1.6
16
14
1.4
12
5.5V
1.2
10
8
5V
1
6
4.5V
0.8
4
6.5V
4V
0.6
8V
2
20V
0
0
5
10
15
V
25
VDS
0.4
0 2 4 6 8 10 12 14 16 A 20
ID
Rev. 2.91
Page 6
2009-11-30
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