SPP11N65C3_09 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
SPP11N65C3,SPA11N65C3
SPI11N65C3
PG-TO262
V _DS
R_DS(on)
I_D
650 V
0.38 Ω
11 A
PG-TO220FP PG-TO220
Type
SPP11N65C3
SPA11N65C3
SPI11N65C3
Package
PG-TO220
PG-TO220FP
PG-TO262
Ordering Code
Q67040-S4557
SP000216318
Q67040-S4561
Marking
11N65C3
11N65C3
11N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=2.5A, V_DD=50V
Avalanche
energy,
repetitive
t_AR
limited
by
T
2)
jmax
I_D=4A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPP_I SPA
11
11¹⁾
7
7¹⁾
33
33
340
340
Unit
A
A
mJ
0.6
0.6
4
4
A
±20
±20 V
±30
±30
125
33 W
-55...+150
°C
Rev. 2.91
Page 1
2009-11-30