SPP11N60CFD_07 Datasheet, PDF (9/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60CFD
17 Typ. reverse recovery charge
Q_rr = f(T_J)
parameter: I_D = 11A
1200
1100
1000
18 Typ. reverse recovery charge
Q_rr = f(I_D)
parameter: di/dt = 100 A/µs
1200
1100
1000
900
800
Tj = 125°C
900
700
600
Tj = 25°C
800
500
400
700
300
600
25
50
75
°C
125
T_j
200
1 2 3 4 5 6 7 8 9 A 11
I_D
19 Typ. reverse recovery charge
Q_rr = f(di/dt)
parameter: ID = 11 A
1600
1500
Tj = 125°C
1400
1300
1200
1100
1000
Tj = 25°C
900
800
700
600
100 200 300 400 500 600 700 A/µs 900
di/dt
Rev. 2.6
Page 9
2007-08-30