SPP11N60CFD_07 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60CFD
1 Power dissipation
P_tot = f (T_C)
SPP11N60CFD
140
W
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 °C 160
T_C
2 Safe operating area
I_D = f ( V_DS )
parameter : D = 0 , T_C=25°C
10 ²
A
10 ¹
10 ⁰
10 ^-1
10 ^-2
0
10
tp=0.001 ms
tp=0.01 ms
tp=0.1 ms
tp=1 ms
DC
1
10
2
10
V
3
10
V_DS
3 Transient thermal impedance
Z_thJC = f (t_p)
parameter: D = tp/T
10 ¹
K/W
10 ⁰
10 ^-1
4 Typ. output characteristic
I_D = f (V_DS); T_j=25°C
parameter: tp = 10 µs, VGS
40
Vgs = 20V
A ^{Vgs = 10V}
Vgs = 9V
Vgs = 8.5V
Vgs = 8V
30 _{Vgs = 7.5V}
Vgs = 7V
25 ^{Vgs = 6.5V}
Vgs = 6V
10 ^-2
10 ^-3
20
D = 0.5
D = 0.2
D = 0.1
15
D = 0.05
D = 0.02
10
D = 0.01
single pulse
5
10 ^-4
-7
10
-6
10
-5
10
-4
10
-3
10
s
-1
10
t_p
0
0
4
8
12 16 20 V 26
V_DS
Rev. 2.6
Page 5
2007-08-30