SPP11N60CFD_07 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60CFD
13 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP11N60CFD
720
V
680
14 Avalanche power losses
P_AR = f (f )
parameter: E_AR=0.6mJ
300
W
660
200
640
150
620
600
100
580
50
560
540
-60 -20
20
60
100 °C
180
T_j
0₄
10
5
10
Hz
6
10
f
15 Typ. capacitances
C = f (V_DS)
parameter: VGS=0V, f=1 MHz
10 ⁴
pF
C_iss
10 ³
10 ²
C_oss
10 ¹
C_rss
10 ⁰
0
100 200 300 400
Rev. 2.6
16 Typ. C_oss stored energy
E_oss=f(V _DS)
7.5
µJ
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
V
600
0
V_DS
Page 8
100 200 300 400
V
600
V_DS
2007-08-30