SPP11N60CFD_07 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60CFD
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Inverse diode continuous
forward current
I_S
T_C=25°C
-
-
11 A
Inverse diode direct current,
I_SM
pulsed
-
-
28
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
V _SD
t_rr
Q_rr
I_rrm
di _rr/dt
V_GS=0V, I_F=I _S
V_R=480V, I_F=I_S ,
di_F/dt=100A/µs
-
1 1.2 V
- 140 - ns
-
0.7
- µC
-
11
-A
- 1200 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
Value
typ.
typ.
Thermal resistance
Thermal capacitance
R_th1
R_th2
R_th3
R_th4
R_th5
R_th6
0.015
0.03
0.056
0.197
0.216
0.083
K/W
C_th1
C_th2
C_th3
C_th4
C_th5
C_th6
0.0001878
0.0007106
0.000988
0.002791
0.007285
0.063
Unit
Ws/K
P_tot (t)
T_j R_th1
C _th1
C _th2
R _{th,n T case} ^{External Heatsink}
C _th,n
T_amb
Rev. 2.6
Page 4
2007-08-30