SPP11N60CFD_07 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60CFD
9 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 11 A pulsed
SPP11N60CFD
16
V
0.2 VDS max
12
0.8 V_{DS max}
10
10 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP11N60CFD}
A
10 ¹
8
6
4
2
0
0 10 20 30 40 50 ^nC 70
Q_Gate
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
11 Avalanche SOA
I_AR = f (t_AR)
par.: Tj ≤ 150 °C
11
A
9
12 Avalanche energy
E_AS = f (T_j)
par.: ID = 5.5 A, VDD = 50 V
350
mJ
8
250
7
200
6
5
T_j(START)=25°C
4
3
T_j(START)=125°C
2
1
150
100
50
0 _-3
-2
-1
0
1
2
10 10 10 10 10 10
µs
4
10
t _AR
0
20 40 60 80 100 120 °C 160
T_j
Rev. 2.6
Page 7
2007-08-30