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| SPP11N60CFD_07 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology | |||
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SPP11N60CFD
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Maximum diode commutation speed
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Symbol
dv/dt
di F/dt
Value
80
600
Unit
V/ns
A/µs
Symbol
RthJC
RthJA
T sold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
62
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V (BR)DS VGS=0V, ID=11A
- 700
breakdown voltage
-V
-
Gate threshold voltage
V GS(th) ID=500µÎ, VGS=VDS 3
4
5
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
µA
Tj=25°C,
-
1.1
-
Tj=150°C
- 900 -
Gate-source leakage current
Drain-source on-state resistance
IGSS
RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=7A,
Tj=25°C
-
- 100 nA
â¦
- 0.38 0.44
Tj=150°C
- 1.02 -
Gate input resistance
RG
f=1MHz, open Drain
-
0.86 -
Rev. 2.6
Page 2
2007-08-30
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