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SPP02N80C3 Datasheet, PDF (9/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor
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17 Avalanche power losses
PAR = f (f )
parameter: EAR=0.05mJ
50
W
30
20
10
Final data
SPP02N80C3
SPA02N80C3
18 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
pF
10 3
Ciss
10 2
Coss
10 1
Crss
0
10
4
10 5
19 Typ. Coss stored energy
Eoss=f(VDS)
Hz
10 6
f
3
µJ
10 0
0
100 200 300 400 500 600 V 800
VDS
2
1.5
1
0.5
0
0 100 200 300 400 500 600 700 V 900
VDS
Page 9
2003-10-14
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