SPP02N80C3 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP02N80C3
SPA02N80C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
g_fs
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
Effective output capacitance,³⁾ C_o(er)
energy related
Effective output capacitance,⁴⁾ C_o(tr)
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
t_r
t_d(off)
t_f
V_DS≥2*I_D*R_DS(on)max,
I_D=1.2A
V_GS=0V, V_DS=25V,
f=1MHz
V_GS=0V,
V_DS=0V to 480V
V_DD=400V, V_GS=0/10V,
I_D=2A,
R_G=47Ω
Values
Unit
min. typ. max.
-
1.5
-S
- 290 - pF
- 130 -
-
6
-
- 11.2 -
- 20.6 -
-
25
- ns
-
15
-
-
65 75
-
18 23
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q_gs
Q_gd
V_DD=640V, I_D=2A
Gate charge total
Q_g
V_DD=640V, I_D=2A,
V_GS=0 to 10V
Gate plateau voltage
V_(plateau) V_DD=640V, I_D=2A
-
1
- nC
-
5
-
-
9
12
-
6
-V
1Limited _{only by maximum temperature}
2Repetitve _{avalanche causes additional power losses that can be calculated asPAV=EAR*f.}
3_{Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.}
4_{Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.}
Page 3
2003-10-14