SPP02N80C3 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP02N80C3
SPA02N80C3
9 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
15
10 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 1.2 A, V_GS = 10 V
SPP02N80C3
15
Ω
Ω
4V
4.5V
5V
5.5V
11
6V
9
6.5V
20V
7
5
0
0.5
1
1.5
2
A
3
I_D
12
11
10
9
8
7
6
5
4
98%
3
typ
2
1
0
-60 -20 20
60 100 °C
180
T_j
11 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
5.5
A
25°C
12 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 2 A pulsed
SPP02N80C3
16
V
4.5
4
3.5
3
2.5
150°C
2
12
0,2 V_{DS max}
10
0,8 V_{DS max}
8
6
1.5
4
1
2
0.5
0
0 2 4 6 8 10 12 14 16 _V 20
V_GS
0
0 2 4 6 8 10 12 _nC 16
Q_Gate
Page 7
2003-10-14