SPP02N80C3 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP02N80C3
SPA02N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS
R_DS(on)
I_D
800 V
2.7 Ω
2
A
• Periodic avalanche rated
P-TO220-3-31 P-TO220-3-1
• Extreme dv/dt rated
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
3
12
P-TO220-3-31
Type
SPP02N80C3
SPA02N80C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4432
P-TO220-3-31 Q67040S4634
Marking
02N80C3
02N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=1A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=2A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
Unit
SPP
SPA
A
2
2¹⁾
1.2
1.2¹⁾
6
6
A
90
90 mJ
0.05
0.05
2
2
A
±20
±20 V
±30
±30
42
30.5 W
-55...+150
°C
Page 1
2003-10-14