SPP02N80C3 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP02N80C3
SPA02N80C3
13 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{1 SPP02N80C3}
A
14 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
2
A
1.6
10 ⁰
1.4
1.2
T_{j(START)=25°C}
1
10 ^-1
10 ^-2
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
0.8
0.6
0.4 Tj(START)=125°C
0.2
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
10 ³
µs ^{10 5}
t_AR
15 Avalanche energy
E_AS = f (T_j)
par.: I_D = 1 A, V_DD = 50 V
90
mJ
70
60
50
40
30
20
10
0
25 45 65 85 105
16 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
125 _°C 155
T_j
Page 8
980 ^SPP02N80C3
V
940
920
900
880
860
840
820
800
780
760
740
720
-60 -20 20
60
100 °C
180
T_j
2003-10-14