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SPP02N80C3 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor
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5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
Final data
SPP02N80C3
SPA02N80C3
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 -1
D = 0.5
10 -1
D = 0.2
D = 0.5
D = 0.1
D = 0.2
D = 0.05
D = 0.1
D = 0.02
D = 0.05
10 -2
D = 0.01
single pulse
10 -2
D = 0.02
D = 0.01
single pulse
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
5.5
A
20V
4.5
8V
7V
4
3.5
6.5V
3
2.5
6V
2
1.5
5.5V
1
5V
0.5
4V
0
0
4
8
12 16 20 V 26
VDS
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
3
A
20V
2.4
6.5V
6V
2.2
2
1.8
5.5V
1.6
1.4
1.2
1
5V
0.8
0.6
4.5V
0.4
0.2
4V
0
0
4
8
12 16 20 V 26
VDS
Page 6
2003-10-14
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