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| SKW25N120 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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SKW25N120
500ns
400ns
300ns
IF=25A
200ns
100ns
IF=12A
0ns
300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
50A
40A
IF=25A
30A
IF=12A
20A
10A
0A
300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
5µC
4µC
IF=25A
3µC
IF=12A
2µC
1µC
0µC
300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
400A/µs
300A/µs
200A/µs
100A/µs
IF=12A
IF=25A
0A/µs
300A/µs
500A/µs
700A/µs
900A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
Power Semiconductors
9
Rev. 2_1 Apr 06
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